PART |
Description |
Maker |
W3HG2128M72EER534D4MG |
256M X 72 MULTI DEVICE DRAM MODULE, ZMA200
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
EBJ21UE8BDS0-AE-F |
256M X 64 MULTI DEVICE DRAM MODULE, DMA204
|
ELPIDA MEMORY INC
|
AEPDH4M9L-10S-NP AEPDS4M9L-10S-NP AEPDH4M9L-12N-NP |
4M X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30 SIMM-30 4M X 9 MULTI DEVICE DRAM MODULE, 120 ns, SMA30 SIMM-30
|
Linear Technology, Corp.
|
AK5322048NK-80 AK5322048NK-60 AK5322048NK-70 |
2M X 32 MULTI DEVICE DRAM MODULE, 80 ns, DMA72 DIMM-72 2M X 32 MULTI DEVICE DRAM MODULE, 60 ns, DMA72 DIMM-72 2M X 32 MULTI DEVICE DRAM MODULE, 70 ns, DMA72 DIMM-72
|
SUSUMU Co., Ltd. Aeroflex, Inc.
|
AK58256ASP-60 AK58256AGP-60 |
256K X 8 MULTI DEVICE DRAM MODULE, 60 ns, SMA30
|
|
HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC Hynix Semiconductor, Inc.
|
MF18M1-J17AT |
8M X 32 MULTI DEVICE DRAM CARD, 70 ns, XMA88 CARD-88
|
Micross Components
|
M2V56S40ATP-7 M2V56S40ATP-6 M2V56S40ATP-5 M2V56S20 |
256M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 0603 18 OHM 1/16W RESISTOR, 1K, 1%, SMT 0603 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
W3HG2128M72EER665PD4IMG W3HG2128M72EER534PD4MG W3H |
256M X 72 DDR DRAM MODULE, 0.45 ns, DMA200 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA200
|
WHITE ELECTRONIC DESIGNS CORP MICROSEMI CORP-PMG MICROELECTRONICS
|
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